On the occasion of the 20th Anniversary of The International Training Institute for Materials Science - ITIMS (1992 - 2012), of Hanoi University of Science and Technology (HUST), ITIMS will hold an International Conference on Advanced Materials and Nanotechnologies in Hanoi (ICAMN) from 13-th to 14-th of December, 2012. The Conference will provide a forum for scientists worldwide to exchange their research progress in the various exciting areas of advanced materials including synthesis and characterizations of advanced bulk and nano-scale dimensional materials, as well as on the nanotechnologies and applications. The Conference also aims to provide a possibility for exchange of experiences of international collaboration in these fields. Authors are invited to submit their abstracts/papers in the fields of nanomaterials, nanotechnology and applications.

New papers:

Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer

(Received 28 No vember 2011; accepted 11 Mar ch 2012; published online 2 April 2012)

Abstract: Influence of Schottky contact between source/drain electrodes and high conductivity a-InGaZnO active layer to the performance of nonvolatile memory devices was first proposed. The Schottky barrier devices faced to the difficulty on electrical discharging process due to the energy barrier forming at the interface, which can be resolved by using Ohmic devices. A memory window of 2.83 V at programming/erasing voltage of ±13 V for Ohmic and 5.58 V at programming voltage of 13 V and light assisted erasing at −7 V for Schottky devices was obtained. Both memory devices using SiO₂/SiO_x/SiO_xN_y stacks showed a retention exceeding 70% of trapped charges 10 yr with operation voltages of ±13 V at an only programming duration of 1 ms.