Written by Admin
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Friday, 04 May 2012 11:14 |

On the occasion of the 20th Anniversary of The International Training
Institute for Materials Science - ITIMS (1992 - 2012), of Hanoi University of Science
and Technology (HUST), ITIMS will hold an International Conference on
Advanced Materials and Nanotechnologies in Hanoi (ICAMN) from 13-th to 14-th of December, 2012.
The Conference will provide a forum for scientists worldwide to
exchange their research progress in the various exciting areas of
advanced materials including synthesis and characterizations of advanced
bulk and nano-scale dimensional materials, as well as on the
nanotechnologies and applications. The Conference also aims to provide a
possibility for exchange of experiences of international collaboration
in these fields. Authors are invited to submit their abstracts/papers in
the fields of nanomaterials, nanotechnology and applications.
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Written by Admin
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Thursday, 05 April 2012 10:26 |
New papers:
Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layerCitation: Appl. Phys. Lett. 100, 143502 (2012); doi: 10.1063/1.3699221
View online: http://apl.aip.org/resource/1/applab/v100/i14/p143502_s1?isAuthorized=no
Thanh Thuy Trinh1,2,Van Duy Nguyen3,Hong Hanh Nguyen1,Jayapal Raja1,Juyeon Jang1,Kyungsoo Jang1,Kyunghyun Baek1,Vinh Ai Dao1,2,
and Junsin Yi1 1Information
and Communication Device Laboratory, School of Information and
Communication Engineering, Sungkyunkwan University, South Korea
2Faculty of Materials Science, Vietnam National University, Ho Chi Minh City, Vietnam
3International Training Institute for Materials Science, Hanoi University of Science and Technology, Vietnam
(Received 28 No vember 2011; accepted 11 Mar ch 2012; published online 2 April 2012)
Abstract: Influence of Schottky contact between source/drain electrodes and high
conductivity a-InGaZnO active layer to the performance of nonvolatile
memory devices was first proposed. The Schottky barrier devices faced to
the difficulty on electrical discharging process due to the energy
barrier forming at the interface, which can be resolved by using Ohmic
devices. A memory window of 2.83 V at programming/erasing voltage of
±13 V for Ohmic and 5.58 V at programming voltage of 13 V and light
assisted erasing at −7 V for Schottky devices was obtained. Both memory
devices using SiO2/SiOx/SiOxNy
stacks showed a retention exceeding 70% of trapped charges 10 yr with
operation voltages of ±13 V at an only programming duration of 1 ms.
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Last Updated ( Thursday, 05 April 2012 10:47 )
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Written by Admin
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Friday, 30 December 2011 10:56 |
New papers
Minh D. Nguyen, MatthijnDekkers,
Evert Houwman, Ruud Steenwelle, Xin Wan,Andreas Roelofs, Thorsten
Schmitz-Kempen, and GuusRijnders, “Misfit strain dependence of ferroelectric
and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3
thin films”, Applied Physics Letters 99 (2011) 252904-3.
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Last Updated ( Friday, 30 December 2011 11:03 )
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Written by Admin
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Monday, 12 December 2011 11:55 |
Nguyen Anh Tuan* and Nguyen Phuc Duong, “Structural, magnetic, and magnetotransport properties of NiMnSb thin films deposited by flash evaporation”, Applied Physics Letters 99 (2011) 162507-3.
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Last Updated ( Monday, 12 December 2011 13:46 )
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