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New papers: Applied Physics Letters,101 (2012) 253106 Print E-mail
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Wednesday, 19 December 2012 09:08

New papers: Applied Physics Letters,101 (2012) 253106

Nguyen Van Hieu*, Phung Thi Hong Van, Le Tien Nhan, Nguyen Van Duy, Nguyen Duc Hoa, “Giant enhancement of H2S gas response by decorating n-type SnO2 nanowires with p-type NiO nanoparticles”, Applied Physics Letters,101 (2012) 253106

Abstract:Metal oxide nanowires (NWs) are widely considered as promising materials for gas sensor applications. Here, we demonstrate that by decorating NiO nanoparticles on SnO2 NWs, the gas response to 10 ppm H2S increased up to ~351-fold. The response of the NiO-decorated SnO2 NWs sensor to 10 ppm H2S at 300 °C reached ~1372, whereas the cross-gas responses to 5 ppm NH3, 200 ppm C2H5OH, and 1 ppm NO2 were negligible (1.8 to 2.9). The enhanced H2S sensing performance was attributed by the catalytic effect of NiO and the formation of a continuous chain of n-p-n-p junctions.

 


 
ICAMN 2012 - International Conference on Advanced Materials and Nanotechnologies in Hanoi Print E-mail
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Friday, 04 May 2012 11:14

On the occasion of the 20th Anniversary of The International Training Institute for Materials Science - ITIMS (1992 - 2012), of Hanoi University of Science and Technology (HUST), ITIMS will hold an International Conference on Advanced Materials and Nanotechnologies in Hanoi (ICAMN) from 13-th to 14-th of December, 2012. The Conference will provide a forum for scientists worldwide to exchange their research progress in the various exciting areas of advanced materials including synthesis and characterizations of advanced bulk and nano-scale dimensional materials, as well as on the nanotechnologies and applications. The Conference also aims to provide a possibility for exchange of experiences of international collaboration in these fields. Authors are invited to submit their abstracts/papers in the fields of nanomaterials, nanotechnology and applications.


 
New papers: Applied Physics Letters 100, 143502 (2012); doi: 10.1063/1.3699221 Print E-mail
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Thursday, 05 April 2012 10:26

New papers:

Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer

Citation: Appl. Phys. Lett. 100, 143502 (2012); doi: 10.1063/1.3699221
View online: http://apl.aip.org/resource/1/applab/v100/i14/p143502_s1?isAuthorized=no 
 
Thanh Thuy Trinh1,2,Van Duy Nguyen3,Hong Hanh Nguyen1,Jayapal Raja1,Juyeon Jang1,Kyungsoo Jang1,Kyunghyun Baek1,Vinh Ai Dao1,2, and Junsin Yi1
1Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, South Korea
2Faculty of Materials Science, Vietnam National University, Ho Chi Minh City, Vietnam
3International Training Institute for Materials Science, Hanoi University of Science and Technology, Vietnam

(Received 28 No vember 2011; accepted 11 Mar ch 2012; published online 2 April 2012)

Abstract: Influence of Schottky contact between source/drain electrodes and high conductivity a-InGaZnO active layer to the performance of nonvolatile memory devices was first proposed. The Schottky barrier devices faced to the difficulty on electrical discharging process due to the energy barrier forming at the interface, which can be resolved by using Ohmic devices. A memory window of 2.83 V at programming/erasing voltage of ±13 V for Ohmic and 5.58 V at programming voltage of 13 V and light assisted erasing at −7 V for Schottky devices was obtained. Both memory devices using SiO2/SiOx/SiOxNy stacks showed a retention exceeding 70% of trapped charges 10 yr with operation voltages of ±13 V at an only programming duration of 1 ms.


 

Last Updated ( Thursday, 05 April 2012 10:47 )

 
New papers: Applied Physics Letters 99 (2011) 252904-3 Print E-mail
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Friday, 30 December 2011 10:56

New papers

Minh D. Nguyen, MatthijnDekkers, Evert Houwman, Ruud Steenwelle, Xin Wan,Andreas Roelofs, Thorsten Schmitz-Kempen, and GuusRijnders, “Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films”,  Applied Physics Letters  99 (2011) 252904-3.

Last Updated ( Friday, 30 December 2011 11:03 )
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Nguyen Anh Tuan's Applied Physics Letters Print E-mail
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Monday, 12 December 2011 11:55

 Nguyen Anh Tuan* and Nguyen Phuc Duong, “Structural, magnetic, and magnetotransport properties of NiMnSb thin films deposited by flash evaporation”, Applied Physics Letters  99 (2011) 162507-3.

Last Updated ( Monday, 12 December 2011 13:46 )
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