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First Announcement of ACCS2017 - The 12th Asian Conference on Chemical Sensors Print E-mail
Written by Hoang Quoc Khanh   
Wednesday, 15 March 2017 10:47

First Announcement of ACCS2017 - The 12th Asian Conference on Chemical Sensors

 

Dear colleagues and friends,

International Training Institute for Materials Science (ITIMS) is hosting The 12th Asian Conference on Chemical Sensors (ACCS2017), which will be held from 12-15 November, 2017 in Hanoi, Vietnam (Pan Pacific Hotel Hanoi). We are pleasure and honor to invite you to attend the conference.

We also organize a Special Symposium on Advanced Materials and Nanotechnology in this conference. The symposium is dedicated to the 25th anniversary of the International Training Institute for Materials Science (ITIMS). We would like to welcome you who have been collaborating with ITIMS to participate in this symposium.

Last Updated ( Wednesday, 15 March 2017 10:56 )
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Symposium Q: Synchrotron Radiation and Atomic Layer Deposition for Advanced Materials Print E-mail
Written by Hoang Quoc Khanh   
Wednesday, 15 March 2017 09:57

Dear colleagues,

We would like to encourage you to submit your abstract to the Symposium Q: “Synchrotron Radiation and Atomic Layer Deposition for Advanced Materials” to be held from 18th until 21st of September 2017 in Warsaw (Poland) during the E-MRS Fall Meeting 2017.

Last Updated ( Wednesday, 15 March 2017 10:46 )
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ASAM2017 - Asian Symposium on Advanced Materials on September 27-30 - 2017 Print E-mail
Written by Hoang Quoc Khanh   
Wednesday, 22 February 2017 10:53

Following the previous Asian Symposium on Advanced Materials (ASAM), we are organizing the 6th Asian Symposium on Advanced Materials: Chemistry, Physics & Biomedicine of Functional and Novel Materials (ASAM-6) on September 27-30, 2017 at Hoa Binh Hotel, Hanoi, Vietnam.

The previous symposiums were held at  Vladivostok, Russia (organized by Professors Yury Shchipunov and Chang-Sik Ha), Shanghai, China (organized by Professors Dongyuan Zhao and Limin Wu), Fukuoka, Japan (organized by Professors Atsushi Takahara and Jian Ping Gong, Taipei, Taiwan (organized by Professor Toyoko Imae), and Busan, Korea (organized by Professor Chang-Sik Ha and Professor Yury Schchipunov).

This symposium is intended as a forum for interdisciplinary discussion between scientists and engineers from Asian universities, research institutions and companies, who are investigating or concerned themselves in advanced materials. Such materials can serve for improving and developing chemical engineering, nanotechnology, microelectronics, optics, environmental science and biomedical technologies, they make human life healthy and comfortable in quality.

In view of your research, development expertise, and valuable scientific contributions, on behalf of the ASAM-6 Organization Committee, I would like to invite you and your colleagues to write the paper and attend the ASAM-6. The symposium will be attended by world class experts in fields of the advanced materials.  We would encourage participants to meet and collaborate in research.  The First Circular of the ASAM-6 attached here that provides you more information in detail.

The ASAM-6 Secretariat:

Tel: (84)4 37916752/ (84)4 37563581
Hotline: (+84) 904710876 (Dr. Nguyen Vu Giang)
Fax: (84)4 37 564 696
Email address: This e-mail address is being protected from spambots. You need JavaScript enabled to view it

  


 
The practical summer course “Semiconductor Components” at ITIMS place Print E-mail
Written by Hoang Quoc Khanh   
Wednesday, 22 July 2015 13:48

 

In a cooperation between the Netherlandsand ITIMS institute, supported by the Dutch “Committee Science and Technology”, and one of the world’s largest nanotechnology research institutes; the MESA+ institute,the yearly practical summer course “How to make a photodiode”. was started in July at ITIMS place.

 

Together with 7 enthusiastic master studentsand 3 PhD students we could achieve a successful result. Realizing in the ITIMS clean room, all photolithographicsteps, etching and doing the final metallization,all this on 4 inch wafers, fullydesigned with photodiodesand transistors.

Finally we coulddo electrical measurementsby measuring the photocurrent of the diode in the measurement room at ITIMS place.

 

Looking back at the course RIM(realizing in materials)of 2015, we could say that it was successful and instructive.For next year ITIMS is looking forward to seemore students who will sign up to follow the ITIMS master program so that they also can take part in this interesting course. Thisyearly summer course is given by the Dutch senior research engineer Tom Aarnink from the MESA+ institute.

 

http://www.utwente.nl/mesaplus/


Last Updated ( Wednesday, 22 July 2015 13:50 )

 
New papers: Applied Physics Letters,101 (2012) 253106 Print E-mail
Written by Hoang Quoc Khanh   
Wednesday, 19 December 2012 09:08

New papers: Applied Physics Letters,101 (2012) 253106

Nguyen Van Hieu*, Phung Thi Hong Van, Le Tien Nhan, Nguyen Van Duy, Nguyen Duc Hoa, “Giant enhancement of H2S gas response by decorating n-type SnO2 nanowires with p-type NiO nanoparticles”, Applied Physics Letters,101 (2012) 253106

Abstract:Metal oxide nanowires (NWs) are widely considered as promising materials for gas sensor applications. Here, we demonstrate that by decorating NiO nanoparticles on SnO2 NWs, the gas response to 10 ppm H2S increased up to ~351-fold. The response of the NiO-decorated SnO2 NWs sensor to 10 ppm H2S at 300 °C reached ~1372, whereas the cross-gas responses to 5 ppm NH3, 200 ppm C2H5OH, and 1 ppm NO2 were negligible (1.8 to 2.9). The enhanced H2S sensing performance was attributed by the catalytic effect of NiO and the formation of a continuous chain of n-p-n-p junctions.

 


 
ICAMN 2012 - International Conference on Advanced Materials and Nanotechnologies in Hanoi Print E-mail
Written by Hoang Quoc Khanh   
Friday, 04 May 2012 11:14

On the occasion of the 20th Anniversary of The International Training Institute for Materials Science - ITIMS (1992 - 2012), of Hanoi University of Science and Technology (HUST), ITIMS will hold an International Conference on Advanced Materials and Nanotechnologies in Hanoi (ICAMN) from 13-th to 14-th of December, 2012. The Conference will provide a forum for scientists worldwide to exchange their research progress in the various exciting areas of advanced materials including synthesis and characterizations of advanced bulk and nano-scale dimensional materials, as well as on the nanotechnologies and applications. The Conference also aims to provide a possibility for exchange of experiences of international collaboration in these fields. Authors are invited to submit their abstracts/papers in the fields of nanomaterials, nanotechnology and applications.


 
New papers: Applied Physics Letters 100, 143502 (2012); doi: 10.1063/1.3699221 Print E-mail
Written by Hoang Quoc Khanh   
Thursday, 05 April 2012 10:26

New papers:

Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer

Citation: Appl. Phys. Lett. 100, 143502 (2012); doi: 10.1063/1.3699221
View online: http://apl.aip.org/resource/1/applab/v100/i14/p143502_s1?isAuthorized=no 
 
Thanh Thuy Trinh1,2,Van Duy Nguyen3,Hong Hanh Nguyen1,Jayapal Raja1,Juyeon Jang1,Kyungsoo Jang1,Kyunghyun Baek1,Vinh Ai Dao1,2, and Junsin Yi1
1Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, South Korea
2Faculty of Materials Science, Vietnam National University, Ho Chi Minh City, Vietnam
3International Training Institute for Materials Science, Hanoi University of Science and Technology, Vietnam

(Received 28 No vember 2011; accepted 11 Mar ch 2012; published online 2 April 2012)

Abstract: Influence of Schottky contact between source/drain electrodes and high conductivity a-InGaZnO active layer to the performance of nonvolatile memory devices was first proposed. The Schottky barrier devices faced to the difficulty on electrical discharging process due to the energy barrier forming at the interface, which can be resolved by using Ohmic devices. A memory window of 2.83 V at programming/erasing voltage of ±13 V for Ohmic and 5.58 V at programming voltage of 13 V and light assisted erasing at −7 V for Schottky devices was obtained. Both memory devices using SiO2/SiOx/SiOxNy stacks showed a retention exceeding 70% of trapped charges 10 yr with operation voltages of ±13 V at an only programming duration of 1 ms.


 

Last Updated ( Thursday, 05 April 2012 10:47 )

 
New papers: Applied Physics Letters 99 (2011) 252904-3 Print E-mail
Written by Hoang Quoc Khanh   
Friday, 30 December 2011 10:56

New papers

Minh D. Nguyen, MatthijnDekkers, Evert Houwman, Ruud Steenwelle, Xin Wan,Andreas Roelofs, Thorsten Schmitz-Kempen, and GuusRijnders, “Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films”,  Applied Physics Letters  99 (2011) 252904-3.

Last Updated ( Friday, 30 December 2011 11:03 )
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