Written by Admin
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Wednesday, 27 March 2019 23:04 |
The 4th International Conference on Advanced Materials and Nanotechnology
(ICAMN 2019)
About the ICAMN 2019 Conference
We are pleased to invite you to join the 4th International Conference on Advanced Materials and Nanotechnology (ICAMN 2019) that will be held from October 13th to 16th, 2019 in Hanoi as a continuation of our successful ICAMN conference series.
Nowadays, the achievements in the research of nanomaterials, nanotechnologies, nanodevices are highlighted as one of the decisive factors in putting forward the development of the fourth industrial revolution in which the Internet of Things (IoT) and the burgeoning industry of interconnected devices are backbone technologies. This scientific activity is aimed to provide a platform for oversea scientists and Vietnamese colleagues to present their cutting edge studies and push forward cooperation and partnership.
The conference will include the following topics:
- Fabrications and Design of Nanomaterials: Photonic, magnetism, multiferroism, topological insulators and superconductors.
- Micro-nano technology for sensor and actuator applications.
- IoT Device Integrations and their Markets.
All ICAMN2019 submitted papers are peer-reviewed. The participator can choose one of three following options:
- ICAMN2019 proceedings with ISBN number
- Journal of Electronic Materials
- Materials Transactions
IMPORTANT DATES:
- Deadline for abstract submission (Now open): June 01, 2019
- Notification of abstract acceptance: July 15, 2019
- Deadline for Proceedings manuscript submission: August 02, 2019
- Notification of Proceedings manuscript acceptance: September 05, 2019
- Deadline for registration: September 20, 2019
CONTACT US
Assoc. Prof. Nguyen Phuc Duong, Coordinator
ITIMS building, Hanoi University of Science and Technology, No.1 Dai Co Viet, Hanoi, Vietnam
Phone: + 84 915.527.063 / +84 926.614.028
E-mail:
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More detail at: http://icamn2019.itims.edu.vn/ |
Last Updated ( Sunday, 31 March 2019 23:37 )
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Written by Admin
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Wednesday, 15 March 2017 10:47 |
First Announcement of ACCS2017 - The 12th Asian Conference on Chemical Sensors
Dear colleagues and friends,
International Training Institute for Materials Science (ITIMS) is hosting The 12th Asian Conference on Chemical Sensors (ACCS2017), which will be held from 12-15 November, 2017 in Hanoi, Vietnam (Pan Pacific Hotel Hanoi). We are pleasure and honor to invite you to attend the conference.
We also organize a Special Symposium on Advanced Materials and Nanotechnology in this conference. The symposium is dedicated to the 25th anniversary of the International Training Institute for Materials Science (ITIMS). We would like to welcome you who have been collaborating with ITIMS to participate in this symposium.
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Last Updated ( Wednesday, 15 March 2017 10:56 )
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Read more...
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Written by Admin
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Wednesday, 22 February 2017 10:53 |
Following the previous Asian Symposium on Advanced Materials (ASAM), we are organizing the 6th Asian Symposium on Advanced Materials: Chemistry, Physics & Biomedicine of Functional and Novel Materials (ASAM-6) on September 27-30, 2017 at Hoa Binh Hotel, Hanoi, Vietnam.
The previous symposiums were held at Vladivostok, Russia (organized by Professors Yury Shchipunov and Chang-Sik Ha), Shanghai, China (organized by Professors Dongyuan Zhao and Limin Wu), Fukuoka, Japan (organized by Professors Atsushi Takahara and Jian Ping Gong, Taipei, Taiwan (organized by Professor Toyoko Imae), and Busan, Korea (organized by Professor Chang-Sik Ha and Professor Yury Schchipunov).
This symposium is intended as a forum for interdisciplinary discussion between scientists and engineers from Asian universities, research institutions and companies, who are investigating or concerned themselves in advanced materials. Such materials can serve for improving and developing chemical engineering, nanotechnology, microelectronics, optics, environmental science and biomedical technologies, they make human life healthy and comfortable in quality.
In view of your research, development expertise, and valuable scientific contributions, on behalf of the ASAM-6 Organization Committee, I would like to invite you and your colleagues to write the paper and attend the ASAM-6. The symposium will be attended by world class experts in fields of the advanced materials. We would encourage participants to meet and collaborate in research. The First Circular of the ASAM-6 attached here that provides you more information in detail.
The ASAM-6 Secretariat:
Tel: (84)4 37916752/ (84)4 37563581
Hotline: (+84) 904710876 (Dr. Nguyen Vu Giang)
Fax: (84)4 37 564 696
Email address:
This e-mail address is being protected from spambots. You need JavaScript enabled to view it
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Written by Admin
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Wednesday, 22 July 2015 13:48 |
In a cooperation between the Netherlandsand ITIMS institute,
supported by the Dutch “Committee Science and Technology”, and one of the world’s largest nanotechnology research
institutes; the MESA+
institute,the yearly practical summer course “How to make a photodiode”. was started in July at ITIMS
place.
Together with 7 enthusiastic master studentsand 3 PhD
students we could achieve a successful result. Realizing in the ITIMS clean
room, all photolithographicsteps, etching and doing the final metallization,all
this on 4 inch wafers, fullydesigned with photodiodesand transistors.
Finally we coulddo electrical measurementsby measuring the
photocurrent of the diode in the measurement room at ITIMS place.
Looking back at the course RIM(realizing in materials)of
2015, we could say that it was successful and instructive.For next year ITIMS
is looking forward to seemore students who will sign up to follow the ITIMS
master program so that they also can take part in this interesting course. Thisyearly summer course is given by the Dutch senior
research engineer Tom Aarnink from the MESA+
institute.
http://www.utwente.nl/mesaplus/
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Last Updated ( Wednesday, 22 July 2015 13:50 )
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Written by Admin
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Wednesday, 19 December 2012 09:08 |
New papers: Applied Physics Letters,101 (2012) 253106
Nguyen Van Hieu*, Phung Thi Hong
Van, Le Tien Nhan, Nguyen Van Duy, Nguyen Duc Hoa, “Giant enhancement of H2S gas response by decorating n-type
SnO2 nanowires with p-type NiO nanoparticles”, Applied Physics
Letters,101 (2012) 253106
Abstract:Metal oxide nanowires (NWs) are widely considered as
promising materials for gas sensor applications. Here, we demonstrate that by
decorating NiO nanoparticles on SnO2 NWs, the gas response to
10 ppm H2S increased up to ~351-fold. The response of the
NiO-decorated SnO2 NWs sensor to 10 ppm H2S at
300 °C reached ~1372, whereas the cross-gas responses to 5 ppm NH3,
200 ppm C2H5OH, and 1 ppm NO2 were
negligible (1.8 to
2.9). The enhanced H2S sensing performance was attributed by the
catalytic effect of NiO and the formation of a continuous chain of n-p-n-p
junctions.
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Written by Admin
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Friday, 04 May 2012 11:14 |

On the occasion of the 20th Anniversary of The International Training
Institute for Materials Science - ITIMS (1992 - 2012), of Hanoi University of Science
and Technology (HUST), ITIMS will hold an International Conference on
Advanced Materials and Nanotechnologies in Hanoi (ICAMN) from 13-th to 14-th of December, 2012.
The Conference will provide a forum for scientists worldwide to
exchange their research progress in the various exciting areas of
advanced materials including synthesis and characterizations of advanced
bulk and nano-scale dimensional materials, as well as on the
nanotechnologies and applications. The Conference also aims to provide a
possibility for exchange of experiences of international collaboration
in these fields. Authors are invited to submit their abstracts/papers in
the fields of nanomaterials, nanotechnology and applications.
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Written by Admin
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Thursday, 05 April 2012 10:26 |
New papers:
Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layerCitation: Appl. Phys. Lett. 100, 143502 (2012); doi: 10.1063/1.3699221
View online: http://apl.aip.org/resource/1/applab/v100/i14/p143502_s1?isAuthorized=no
Thanh Thuy Trinh1,2,Van Duy Nguyen3,Hong Hanh Nguyen1,Jayapal Raja1,Juyeon Jang1,Kyungsoo Jang1,Kyunghyun Baek1,Vinh Ai Dao1,2,
and Junsin Yi1 1Information
and Communication Device Laboratory, School of Information and
Communication Engineering, Sungkyunkwan University, South Korea
2Faculty of Materials Science, Vietnam National University, Ho Chi Minh City, Vietnam
3International Training Institute for Materials Science, Hanoi University of Science and Technology, Vietnam
(Received 28 No vember 2011; accepted 11 Mar ch 2012; published online 2 April 2012)
Abstract: Influence of Schottky contact between source/drain electrodes and high
conductivity a-InGaZnO active layer to the performance of nonvolatile
memory devices was first proposed. The Schottky barrier devices faced to
the difficulty on electrical discharging process due to the energy
barrier forming at the interface, which can be resolved by using Ohmic
devices. A memory window of 2.83 V at programming/erasing voltage of
±13 V for Ohmic and 5.58 V at programming voltage of 13 V and light
assisted erasing at −7 V for Schottky devices was obtained. Both memory
devices using SiO2/SiOx/SiOxNy
stacks showed a retention exceeding 70% of trapped charges 10 yr with
operation voltages of ±13 V at an only programming duration of 1 ms.
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Last Updated ( Thursday, 05 April 2012 10:47 )
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