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Ngo Ngoc Ha
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Tuesday, 02 January 2018 14:19

Ngo Ngoc HaFull Name: Dr.  Ngo Ngoc Ha
Work address: Room 408, ITIMS-Building, No. 1 Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam
Email: This e-mail address is being protected from spambots. You need JavaScript enabled to view it
Position: Lecturer
Tel:  84 4 38680787
Fax: 84 4 38692963


1. Teaching Courses:

  • Optoelectronic materials and devices

2. Research interests: 

  • Optical and electrical properties of Si, Ge, and other semiconductor materials at nanoscale.
  • Experimental techniques include multifaceted approaches such as spectrally and time-resolved optical spectroscopy in the visible, near IR and UV ranges.

3. Published papers:

1. L.T. Cong, N.T.N. Lam, N.T. Giang, P.T. Kien, N.D. Dung, N.N. Ha*, N-type silicon nanowires prepared by silver metal-assisted chemical etching: Fabrication and optical properties, Mat Sci Semicon Proc. 90, 198-204 (2019);

2. B.Q. Thanh, T.N. Khiem, N.N. Ha*, P.V. Do, Microscopic and optical parameters of Eu3+-doped SnO2–SiO2 nanocomposites prepared by sol−gel method, Journal of Luminescence 201, 129-134 (2018);

3. N.D. Dung, T.Q. Tuan, N.T. Khoi, P.T. Huy, N.N. Ha, In situ observation of phase transformation in iron carbide nanocrystals, Micron 104, 61-65 (2018)

4. P. V. Tuan, N.N. Ha, ND Dung, T.N. Khiem, Influence of Hydrothermal Temperature on the Optical Properties of Er-Doped SnO2 Nanoparticles, Journal of Electronic Materials 46 (6), 3341-3344 (2017);

5. P.V. Tuan, N.D. Dung, N.N. Ha, T.N. Khiem, Hydrothermal synthesis and characteristic photoluminescence of Er-doped SnO2 nanoparticles, Physica B: Condensed Matter 501, 34-37 (2016);

6. N.N. Ha*, N.T. Giang, T.N. Khiem, N.D. Dung, T. Gregorkiewicz, Spectral probing of carrier traps in Si–Ge alloy nanocrystals, physica status solidi (RRL)–Rapid Research Letters 10 (11), 824-827 (2016);

7. P.S. Tung, L.T.T Hien, N.N. Ha, T.N. Khiem, N.D. Chien, Influence of Composition, Doping Concentration and Annealing Temperatures on Optical Properties of Eu3+-Doped ZnO–SiO2 Nanocomposites, Journal of Nanoscience and Nanotechnology 16 (8), 7955-7958 (2016);

8. N.T. Giang, N.D. Dung, T. V. Quang, N.N. Ha*, Nanocrystal growth of single-phase Si1− xGex alloys, Journal of Physics and Chemistry of Solids 93, 121-125 (2016);

9. N.N. Ha*, A. Nishikawa, Y. Fujiwara, T. Gregorkiewicz, Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method, Journal of Science: Advanced Materials and Devices 1 (2), 220-223 (2016);

10.  N.D. Dung, C.T. Son, P.V. Loc, N.H. Cuong, P.T. Kien, P.T. Huy, N.N. Ha, Magnetic properties of sol-gel synthesized C-doped ZnO nanoparticles, Journal of Alloys and Compounds 668, 87-90 (2016);

11.  N.N. Ha*, N.T. Giang, T.T.T. Thuy, N.N. Trung, N.D Dung, S. Saeed, T. Gregorkiewicz, Single phase Si1−xGex nanocrystals and the shifting of the E1 direct energy transition, Nanotechnology 26 (37), 375701 (2015);

12.  B.Q. Thanh, N.N. Ha*, T.N. Khiem, N.D. Chien, Correlation between SnO2 nanocrystals and optical properties of Eu3+ ions in SiO2 matrix: Relation of crystallinity, composition, and photoluminescence, Journal of Luminescence 163, 28-31 (2015)

13. N.N. Ha*, S. Cueff, K. Dohnalová, M. T. Trinh, C. Labbé, R. Rizk, I.N. Yassievich, T. Gregorkiewicz, “Optical excitation of Er3+ ions inside a SiO2 matrix mediated by Si nanocrystals”, Phys. Rev. B 84, 241308(Rapid comunication) (2011).

14. N.N. Ha*, K. Dohnalová, and T. Gregorkiewicz, “Evaluation of free carrier losses to 1.54 μm emission in Si/Si:Er nanolayers on SOI substrate for optical gain observation”, Optical Materials  33 (7), 1094-1096 (2011).

15. N.N. Ha*, K. Dohnalová, T. Gregorkiewicz, and J. Valenta, “Upper limit of optical gain in MBE-grown Si:Er, Physical Review B 81, 195206:1-6, 239902:1 (2010).

16. N.N. Ha*, Z.F. Krasil’nik, and T. Gregorkiewicz, Optical properties of Si/Si:Er multi-nanolayer structures grown by SMBE method, Physica B: Condensed Matter23-24, 5131-5136 (2009).

17.  N.Q. Vinh, N.N. Ha, and T. Gregorkiewicz, “Photonic properties of Er-doped crystalline silicon”, Review paper, Proceedings of the IEEE, 97, Special Issue (7): “Silicon Photonics”, 1269-1283 (2009).

18.  K. Yamaoka, Y. Terai, T. Yamaguchi, H.N. Ngo, T. Gregorkiewicz, and Y. Fujiwara; “Metalorganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 μm photoluminescence, J. Phys: Conference Series 165, 012027 (2009).

4. Published Books:

- Not Available

5. Other information:

Oral presentations:

1. “On the way towards optical amplifiers with MBE-grown Si/Si:Er multinanolayer structures”, Materials Research Society (MRS) Fall Meeting, San Francisco, USA, April 2011.

2. “On the way towards optical amplifiers with MBE-grown Si/Si:Er multinanolayer structures”, The 5th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN), Hanoi, Vietnam, November 2010.

3. “Interplay of optical gain and induced absorption at Er3+ emission in Si/Si:Er nanolayers”, European Materials Research Society (E-MRS) Spring meeting, Strasbourg, France, June 2010.

4. “Non-linear optical properties of Si/Si:Er multi-nanolayer structures”, 3rd Workshop on “Impurity Based Electroluminescent Devices and Materials – IBEDM-2009”, Tossa de Mar, Spain, October 2009.

5. “Photoluminescence from Ge dots in Si grown by MBE method”, SIBET meeting, Manchester, United Kingdom, April 2009.

6. “Investigations of optical gain in Si/Si:Er nanolayers on SOI substrate by variable stripe length/shifting spot method”, European Materials Research Society (E-MRS) Spring 2008 Meeting, Strasbourg, France, May 2008.

7. “Optical properties of Si/Si:Er nanolayers grown by MBE on semi-insulating (SOI) substrates”, European Materials Research Society (E-MRS) Spring 2007 Meeting, Strasbourg, France, May 2007.

Poster presentations:

1. “Investigations of optical gain of Eu3+ emission in MOCVD-grown GaN”, MRS Fall 2011Meeting, San Francisco, USA, April 2011.

2. “Investigations of optical gain of Eu3+ emission in MOCVD-grown GaN”, “Physics@FOM”, Veldhoven 2011, The Netherlands, January 2010.

3. “Non-linear optical properties of Si/Si:Er multi­nano­layer structures”, “Physics@FOM”, Veldhoven 2010, The Netherlands, January 2010.

4. “Photoluminescence of Ge/Si multiple layers grown by MBE method, MRS Fall 2009 Meeting, Boston, USA, December 2009.

5. “On emission of Er3+ ions in ZnO layers grown by MOCVD”, “Physics@FOM”, Veldhoven, The Netherlands, January 2009.

6. “Search for the optical gain in silicon”, “Physics@FOM”, Veldhoven, The Netherlands, January 2008.

7. “Optical properties of Er-doped Si nanolayers grown by MBE on SOI substrates”, “Physics@Veldhoven”, Veldhoven, The Netherlands, January 2007.



Year of graduation

Field and university



  Physics/University of Amsterdam



  Materials Science/ Hanoi University of Technology



Physics/Vietnam National Universtity - Hanoi

   Remarkable scientific projects:

1. Carrier multiplication in Ge and SiGe nanocrystals embedded in larger band gap materials. Code 103.02-2012.41, supported by the National Foundation for Science & Technology Development (NAFOSTED), 2013-2015.

2. Development of near infrared fluorescent materials based on Si and Ge nanostructures. Code 103.02-2017.38, supported by the National Foundation for Science & Technology Development (NAFOSTED), 2017-2019.

Last Updated ( Tuesday, 06 November 2018 11:51 )

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