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Written by Long VIC   
Monday, 16 January 2017 13:59

Facilities:

  • Clean room

  • Thermal chemical vapor deposition systems

  • Gas sensing measurement systems

  • Pressure sensing measurement systems

  • Accelerator sensing measurement systems

  • High power ultrasonic probe

  • Furnaces

  • Thermal spray coating systems

  • Chip cutting machine

  • Sol-gel systems

  • Sputtering systems

  • Evaporation systems

Sputter system

Description:

Grow single and multilayer thin film from many original materials

Specification:

· Quartz lamp is used to dry sample before growth

· Maximum vacuum: 3.10-7 Torr, turbo pump, 2 sputtering guns, 1 rotating substrate (heated by halogen lamp upto 450ºC), 1 high frequency source 500W, 1 DC source 750W

Contact: Nguyen Van Toan

KeywordsSputter system, Quartz lamp, turbo pump,sputtering guns

Oxygen Plasma

Description: 

Corrosion: SiO2 , Si3 N4 …

Specification:

·  Maximum vacuum: 10-3 Torr

·  2 chambers, 1 high frequency source 500W

Year of manufacture: 1998, installation and use: 2005 

Contact: Nguyen Van Toan

KeywordsOxygen Plasma, 2 chambers, Corrosion

RIE system

Description:

Si deep corrosion

Specification:

· Maximum Vacuum: 3.10-7 Torr, 1 chamber

· Plasma power 1000W

· Substrate temperature: from -150 to 200ºC

· Gas: SF6 , C4 H8 , O2 , Ar và N2

· Manufacturer: SAMCO, JAPAN

· Year of Manufacture: 2007, Installation and use: 2008

Contact: Nguyen Van Toan

Keywords: RIE system, Plasma power, 1 chamber, SAMCO, JAPAN

Oxidation Furnace

Description:

Produce high quality Si oxide layers in dry oxygen environment

Specification:

· Maximum temperature: 1200±5°C

· Gas environment: N2 , O2

· Controlled automatically in the temperature range: 40-1200°C

· Manufacturer: Netherland

· Code name: Tempress 261

Contact: Nguyen Van Toan

Keywords: Oxidation Furnace, Tempress 261, Netherland

3 stack Furnace

Description:

·  Impurity diffusion in semiconductors at high temperature

·  Oxidation at high temperature in dry and damp oxygen environment

Specification:

·  Maximum temperature: 1200±5°C

·  Gas environment: N2 , O2, H2O vapor

·  Programming and controlling mixing gas system

Contact: Nguyen Van Toan

Keywords3 stack Furnace,  Impurity diffusion, Oxidation,  damp oxygen environment

LPCVD system

Description:

·  Thin film deposition  Si3 N4 ,  polysilycon

Specification:

·  Maximum temperature: 1200±5°C

·  Programming and controlling mixing gas system

Contact: Nguyen Van Toan

KeywordsLPCVD system, Thin filmpolysilycon

Point probe Unit

Description:

·  Measure thin film resistance

Specification:

·  Resistance from 1 mOhm

Contact: Nguyen Van Toan

KeywordsPoint probe Unit, thin film resistance

Ellipsometery Unit

Description:

·  Measure thin film thickness

Specification:

·  Laser source: 632,8 nm

·  Angle: 0 – 90°

·  Thickness error measured: 2nm

·  Maximum substrate diameter: 150mm

·  Manufacturer: MTA-KFKI, Hungary

Contact: Nguyen Van Toan

KeywordsEllipsometery Unit, thin film thicknes,  MTA-KFKI, Hungary

Balance Unit

Description:

·  Sample mass measurement

Specification:

·  Weight range: 0-160g

·  Error: ±0.02 mg

Contact: Nguyen Van Toan

KeywordsBalance Unit, Sample mass measurement
Alpha - Step Unit

Description:

·  Thin film thickness measurement on different materials

Specification:

·  Measurement method: 2D scan

·  Regulation in manual or automatic mode

·  Sample size: 1-10 cm2

·  Manufacturer: KLA Tencor, USA

·  Year of manufacture: 1994

Contact: Nguyen Van Toan

Keywords Alpha - Step Unit,  Thin film thickness, KLA Tencor, USAmeasurement

Hot plate Unit

Description:

·  Quick annealing thin film materials

Specification:

·  Maximum temperature: 400°C

·  Manufacturer: PMC, USA

·  Year of manufacture: 1994

Contact: Nguyen Van Toan

KeywordsHot plate Unit, annealing thin film materials, PMC, USA

Spinner Unit

Description:

·  Grow thin film by sample spinning deposition

Specification:

·  10 different programs for sample spinning deposition

·  Manufacturer: ANAKA - Japan

·  Year of manufacture: 2005, installation and use: 2005

Contact: Nguyen Van Toan

Keywords Spinner Unit, Grow thin film, spinning deposition, ANAKA - Japan

Align System

Description:

· Create structure and shape for microelectronic components

Specification:

· Resolution: 5 μm

· Mask one side

· Manufacturer:  Carl Suss – GERMANY

Contact: Nguyen Van Toan

KeywordsAlign System, microelectronic components, Carl Suss – GERMANY

Double Side Align System PEM-800

Description:

· Create structure and shape for microelectronic components

Specification:

· Resolution: 2 μm

· Mask two sides

· Manufacturer: UNION – Japan

Contact: Nguyen Van Toan

KeywordsDouble Side Align System, PEM-800, microelectronic components

Microscope Unit

Description:

· Check the sample surface

Specification:

· Magnification: 10x-100x

· Manufacturer: NIKON-Japan

Contact: Nguyen Van Toan

KeywordsMicroscope Unit, NIKON-Japan

Ultrasonic Bath

Description:

· Sample cleaning by ultrasonic wave

Specification:

· Bath dimension: 15x30 cm

· Manufacturer: Cole-Parmer-Germany

Contact: Nguyen Van Toan

Keywords Ultrasonic Bath, ultrasonic wave,Cole-Parmer-Germany
Wet bench System

Description:

· Sample cleaning, chemical mixing

Specification:

· 4 chemical containers

· 1 DI water bath

· 1 DI water nozzle

· 1 chemical heater

Contact: Nguyen Van Toan

Keywords: Wet bench System, Sample cleaning, chemical heater, DI water nozzle

DI water System

Description:

Produce ultrapure water with extremely low ion concentration, high electrical resistance, used in microelectronic technology

Specification:

· Capacity: 40l/h

· Clealiness 18MW.cm

· Ultra-pure water at ITIMS center also suitable for tool analysis center

· Manufacturer:  Millipore Corporation, USA

· Code name: Milli – R0 25TS

Contact: Nguyen Van Toan

KeywordsDI water System, microelectronic technology, Ultra-pure water, Milli – R0 25TS, Millipore Corporation

Last Updated ( Wednesday, 22 February 2017 10:22 )
 

Hanoi University of Science and Technology(HUST)

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