Sputter system
Description:
Grow single and multilayer thin film from many original materials
Specification:
· Quartz lamp is used to dry sample before growth
· Maximum vacuum: 3.10-7 Torr, turbo pump, 2 sputtering guns, 1 rotating substrate (heated by halogen lamp upto 450ºC), 1 high frequency source 500W, 1 DC source 750W
Contact: Nguyen Van Toan
Keywords: Sputter system, Quartz lamp, turbo pump,sputtering guns |
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Oxygen Plasma
Description:
Corrosion: SiO2 , Si3 N4 …
Specification:
· Maximum vacuum: 10-3 Torr
· 2 chambers, 1 high frequency source 500W
Year of manufacture: 1998, installation and use: 2005
Contact: Nguyen Van Toan
Keywords: Oxygen Plasma, 2 chambers, Corrosion |
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RIE system
Description:
Si deep corrosion
Specification:
· Maximum Vacuum: 3.10-7 Torr, 1 chamber
· Plasma power 1000W
· Substrate temperature: from -150 to 200ºC
· Gas: SF6 , C4 H8 , O2 , Ar và N2
· Manufacturer: SAMCO, JAPAN
· Year of Manufacture: 2007, Installation and use: 2008
Contact: Nguyen Van Toan Keywords: RIE system, Plasma power, 1 chamber,
SAMCO, JAPAN |
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Oxidation Furnace
Description:
Produce high quality Si oxide layers in dry oxygen environment
Specification:
· Maximum temperature: 1200±5°C
· Gas environment: N2 , O2
· Controlled automatically in the temperature range: 40-1200°C
· Manufacturer: Netherland
· Code name: Tempress 261
Contact: Nguyen Van Toan Keywords: Oxidation Furnace, Tempress 261, Netherland
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3 stack Furnace
Description:
· Impurity diffusion in semiconductors at high temperature
· Oxidation at high temperature in dry and damp oxygen environment
Specification:
· Maximum temperature: 1200±5°C
· Gas environment: N2 , O2, H2O vapor · Programming and controlling mixing gas system
Contact: Nguyen Van Toan Keywords: 3 stack Furnace, Impurity diffusion, Oxidation,
damp oxygen environment
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LPCVD system
Description:
· Thin film deposition Si3 N4 , polysilycon
Specification:
· Maximum temperature: 1200±5°C · Programming and controlling mixing gas system
Contact: Nguyen Van Toan Keywords: LPCVD system, Thin filmpolysilycon
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Point probe Unit
Description:
· Measure thin film resistance
Specification:
· Resistance from 1 mOhm
Contact: Nguyen Van Toan Keywords: Point probe Unit, thin film resistance
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Ellipsometery Unit
Description:
· Measure thin film thickness
Specification:
· Laser source: 632,8 nm
· Angle: 0 – 90°
· Thickness error measured: 2nm
· Maximum substrate diameter: 150mm · Manufacturer: MTA-KFKI, Hungary
Contact: Nguyen Van Toan Keywords: Ellipsometery Unit, thin film thicknes,
MTA-KFKI, Hungary
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Balance Unit
Description:
· Sample mass measurement
Specification:
· Weight range: 0-160g
· Error: ±0.02 mg
Contact: Nguyen Van Toan Keywords: Balance Unit, Sample mass measurement |
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Alpha - Step Unit
Description:
· Thin film thickness measurement on different materials
Specification:
· Measurement method: 2D scan
· Regulation in manual or automatic mode
· Sample size: 1-10 cm2
· Manufacturer: KLA Tencor, USA · Year of manufacture: 1994
Contact: Nguyen Van Toan Keywords: Alpha - Step Unit, Thin film thickness, KLA Tencor, USAmeasurement
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Hot plate Unit
Description:
· Quick annealing thin film materials
Specification:
· Maximum temperature: 400°C
· Manufacturer: PMC, USA
· Year of manufacture: 1994
Contact: Nguyen Van Toan Keywords: Hot plate Unit, annealing thin film materials, PMC, USA
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Spinner Unit
Description:
· Grow thin film by sample spinning deposition
Specification:
· 10 different programs for sample spinning deposition
· Manufacturer: ANAKA - Japan · Year of manufacture: 2005, installation and use: 2005
Contact: Nguyen Van Toan Keywords: Spinner Unit, Grow thin film, spinning deposition, ANAKA - Japan
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Align System
Description:
· Create structure and shape for microelectronic components
Specification:
· Resolution: 5 μm
· Mask one side
· Manufacturer: Carl Suss – GERMANY
Contact: Nguyen Van Toan Keywords: Align System, microelectronic components, Carl Suss – GERMANY
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Double Side Align System PEM-800
Description:
· Create structure and shape for microelectronic components
Specification:
· Resolution: 2 μm
· Mask two sides
· Manufacturer: UNION – Japan
Contact: Nguyen Van Toan Keywords: Double Side Align System, PEM-800, microelectronic components
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Microscope Unit
Description:
· Check the sample surface
Specification:
· Magnification: 10x-100x
· Manufacturer: NIKON-Japan
Contact: Nguyen Van Toan Keywords: Microscope Unit, NIKON-Japan |
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Ultrasonic Bath
Description:
· Sample cleaning by ultrasonic wave
Specification:
· Bath dimension: 15x30 cm · Manufacturer: Cole-Parmer-Germany
Contact: Nguyen Van Toan Keywords: Ultrasonic Bath, ultrasonic wave,Cole-Parmer-Germany |
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Wet bench System
Description:
· Sample cleaning, chemical mixing
Specification:
· 4 chemical containers
· 1 DI water bath
· 1 DI water nozzle
· 1 chemical heater
Contact: Nguyen Van Toan Keywords: Wet bench System, Sample cleaning, chemical heater, DI water nozzle
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DI water System
Description:
Produce ultrapure water with extremely low ion concentration, high electrical resistance, used in microelectronic technology
Specification:
· Capacity: 40l/h
· Clealiness 18MW.cm
· Ultra-pure water at ITIMS center also suitable for tool analysis center
· Manufacturer: Millipore Corporation, USA
· Code name: Milli – R0 25TS
Contact: Nguyen Van Toan Keywords: DI water System, microelectronic technology, Ultra-pure water, Milli – R0 25TS, Millipore Corporation
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